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7A,600VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN

7A,600VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN

7A,600VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A600VN-channelEnhancementModePowerMOSFET

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WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
更新时间:2025-5-14 16:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TO-220
8425
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TOP220
4500
全新原装、诚信经营、公司现货销售!
ST
23+
TO220-3
16900
正规渠道,只有原装!
ST
25+
TO220-3
18000
全新原装
VISHAY/威世
23+
TO-220
68212
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
24+
220
16900
支持样品,原装现货,提供技术支持!
VISHAY
9856
TO-220
1812
只做进口原装现货!假一赔十!
ST
23+24
TO220F
17228
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
S
TO-220
22+
6000
十年配单,只做原装
ST
24+
TO220-3
200000
原装进口正口,支持样品

P7N60芯片相关品牌

  • AIMTEC
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  • CYSTEKEC
  • Dialight
  • HONGFA
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  • SANYOU
  • SENSORTECHNICS
  • XTAITQ

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