isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

75V,80A Heatsink Planar N-Channel Power MOSFETs

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N-channel 75V - 0.0095廓 - 80A - TO-220 - TO-220FP - D2PAK STripFET??II Power MOSFET

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HEXFET짰 POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at po

Drain Current ?밒D= 80A@ TC=25C

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80A竊?0V N-CHANNEL MOSFET

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N-channel 75V - 0.0095廓 - 80A - TO-220 - TO-220FP - D2PAK STripFET??II Power MOSFET

文件：422.45 Kbytes Page：16 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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