iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

75V,80AHeatsinkPlanarN-ChannelPowerMOSFETs

文件：1.17943 Mbytes Page：5 Pages

N-channel75V-0.0095廓-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

文件：422.45 Kbytes Page：16 Pages

HEXFET짰POWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpo

DrainCurrent?밒D=80A@TC=25C

文件：111.51 Kbytes Page：2 Pages

80A竊?0VN-CHANNELMOSFET

文件：470.45 Kbytes Page：7 Pages

N-channel75V-0.0095廓-80A-TO-220-TO-220FP-D2PAKSTripFET??IIPowerMOSFET

文件：422.45 Kbytes Page：16 Pages

N-CHANNELENHANCEMENTMODEPOWERMOSFET

文件：264.86 Kbytes Page：4 Pages