isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

75V,80A Heatsink Planar N-Channel Power MOSFETs

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80V N-Channel Power MOSFET

N-channel 75V - 0.0095廓 - 80A - TO-220 - TO-220FP - D2PAK STripFET??II Power MOSFET

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N-CHANNEL 75V - 0.0095 ohm - 80A TO-220/TO-220FP/D짼PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom

N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100 AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as prim

N-CHANNEL 75V - 0.0095 ohm - 80A TO-220/TO-220FP/D짼PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom

N-CHANNEL 75V - 0.0095 ohm - 80A TO-220/TO-220FP/D짼PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom

N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100 AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as prim