isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=68V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 68 V, 0.010 OHM, 80 A, TO-220 STripFET II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable in advanced high-efficiency switching applications. ■ Exceptional dv/dt capability ■ 1

N-Channel 60 V (D-S) MOSFET

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