型号 功能描述 生产厂家&企业 LOGO 操作
P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-Channel60-V(D-S)MOSFET

文件:979.18 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-ChannelEnhancementModePowerMOSFET

Description The60N06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

60Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC60N06isN-channelenhancementmodepowerfieldeffecttransistorswithstableoff-statecharacteristics,fastswitchingspeed,lowthermalresistance,usuallyusedattelecomandcomputerapplication. FEATURES *RDS(ON)≤18mΩ@VGS=10V,ID=30A *Ultralowgatecharge(ty

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

60A,60VN-CHANNELPOWERMOSFET

文件:316.43 Kbytes Page:8 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

iscN-ChannelMOSFETTransistor

文件:284.8 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel60-V(D-S)MOSFET

文件:983.43 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2025-7-5 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货
门市
2018
40
200
IR
2048+
TO-220
9851
只做原装正品现货!或订货假一赔十!
24+
4
自己现货
ST/进口原
17+
TO-220
6200
IR
23+
TO-220
8000
只做原装现货
IR
23+
TO-220
7000
FAIRCHILD/仙童
22+
TO-220
25000
只做原装进口现货,专注配单
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货

P60N06芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

P60N06数据表相关新闻