Passive High-voltage Probes

文件：366.48 Kbytes Page：4 Pages

Digital Storage Oscilloscopes

文件：1.030369 Mbytes Page：12 Pages

Passive High Voltage Probes

文件：207.39 Kbytes Page：6 Pages

Digital Storage Oscilloscopes

文件：930.79 Kbytes Page：10 Pages

Digital Phosphor Oscilloscopes

文件：3.15913 Mbytes Page：28 Pages

1000X High Voltage Probe

文件：529.61 Kbytes Page：74 Pages

4 Series MSO Mixed Signal Oscilloscope Datasheet

文件：7.47714 Mbytes Page：44 Pages

MOSFETs

Power MOSFET

MOSFETs

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fas

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip