N-Channel 650 V (D-S) MOSFET

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N-Channel enhancement mode power mos transistor

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.33 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

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5A, 600V N-CHANNEL POWER MOSFET

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Power MOSFET

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N-Channel Power MOSFET

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