包装：散装 描述：ROUND NOSE PLIERS-LONG JAW - STA 工具 钳子

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

丝印代码：P5310T；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：P5316H；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

丝印代码：P5316H；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

丝印代码：P5316T；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：P5310T；80 V, 1 A PNP medium power transistors

文件：274.63 Kbytes Page：14 Pages

丝印代码：P5316T；80 V, 1 A PNP medium power transistors

文件：274.63 Kbytes Page：14 Pages

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

High slew rate operational amplifier

DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose types while providing far superior large-signal AC performance. A unique input stage design allows the amplifier to have a large-signal response nearly ide

High slew rate operational amplifier

DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose types while providing far superior large-signal AC performance. A unique input stage design allows the amplifier to have a large-signal response nearly ide

High slew rate operational amplifier

DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose types while providing far superior large-signal AC performance. A unique input stage design allows the amplifier to have a large-signal response nearly ide

High slew rate operational amplifier

DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose types while providing far superior large-signal AC performance. A unique input stage design allows the amplifier to have a large-signal response nearly ide