80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

80 V, 1 A PNP medium power transistors

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80 V, 1 A PNP medium power transistors

PNP Silicon Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP Silicon Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

PNP Silicon Epitaxial Transistors

文件：76.89 Kbytes Page：5 Pages

PNP Silicon Epitaxial Transistors

文件：85.96 Kbytes Page：5 Pages

PNP Silicon Epitaxial Transistors

文件：85.96 Kbytes Page：5 Pages

PNP Silicon Epitaxial Transistors

文件：76.89 Kbytes Page：5 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 1.5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) SS GP XSTR PNP 80V

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BCP53-16T/SOT223/SC-73 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80 V, 1 A PNP medium power transistors

PNP MEDIUM POWER TRANSISTOR

Features • BVCEO > -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 520mW Power Dissipation • Low Saturation Voltage VCE(sat)

80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

80 V, 1 A PNP medium power transistors