PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli fied giving advantages of cost reduction and reduced size. Applications include power su

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli fied giving advantages of cost reduction and reduced size. Applications include power su

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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