| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P3NA60 | N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.3Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCES ■GATEGHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel650V(D-S)MOSFET 文件：1.0904 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3270 |
原厂直销,现货供应,账期支持! |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
03+ |
TO-220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
23+ |
61350 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
门市 |
2018 |
1 |
|||||
ST |
24+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
23+ |
TO263 |
4000 |
专业优势供应 |
|||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
23+ |
T0-220 |
16900 |
正规渠道,只有原装! |
|||
24+ |
5000 |
公司存货 |
P3NA60芯片相关品牌
P3NA60规格书下载地址
P3NA60参数引脚图相关
- pt1000
- pt100
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- pl2303
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- P3MU-2405ELF
- P3MU-127R2ELF
- P3MU-123R3ELF
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- P3MU-1218ELF
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- P3BU_14
- P3AU_14
- P39FB3
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- P3981
- P3937
P3NA60数据表相关新闻
P3A9606JKZ
P3A9606JKZ
2024-2-22P4SMA10CA
P4SMA10CA
2023-5-15P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3P3403ACL全新原装现货
随时可发货
2019-9-17P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15P35-4304-000-200-模拟杂项
特点·宽带0.5-16GHz的·低插入损耗;4分贝的典型值在8GHz的·衰减0.5dB步进到31.5分贝·开关速度快·通过提高性能的砷化镓过孔P35-4304-000-200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20
DdatasheetPDF页码索引
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