N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650 V (D-S) MOSFET

文件：1.0904 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.1A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

N-Channel 650 V (D-S) MOSFET

文件：1.09043 Mbytes Page：9 Pages

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.3 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE GHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURR