| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l | HARRIS |   | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDH 东海半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
9999 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
PHI |
2018 |
DIP |
1000 |
||||
ST/意法 |
23+ |
TO-220 |
56688 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
S |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
|||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
P12N60芯片相关品牌
P12N60规格书下载地址
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P12N60数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式全套配单服务 0755-23140719/15323480719(微信同号）李s
2019-2-15
DdatasheetPDF页码索引
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