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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P12IE90F4 | Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv | STMICROELECTRONICS 意法半导体 |   | |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv | STMICROELECTRONICS 意法半导体 | |
P12IE90F4产品属性
- 类型
描述
- 型号
P12IE90F4
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MROCHIP/微芯 |
24+ |
NA/ |
1250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICROCHIP/微芯 |
24+ |
8-SOIC |
7671 |
原装正品.优势专营 |
|||
MICROCHIP/微芯 |
22+ |
PDIP |
20000 |
只做全新原装,假一罚十,支持BOM配单 |
|||
MIRCOCHIP |
25+ |
MSOP |
8880 |
原装认准芯泽盛世！ |
|||
MICROCHIP/微芯 |
23+ |
SOP8 |
3000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
P12IE90F4规格书下载地址
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2019-2-15
DdatasheetPDF页码索引
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