位置：首页 > IC中文资料第6168页 > P11NM60FD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P11NM60FD | N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 |   | |
P11NM60FD | N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) | STMICROELECTRONICS 意法半导体 | | |
P11NM60FD | N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET 文件：357.14 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | |
P11NM60FD | N-Channel 650 V (D-S) MOSFET 文件：1.03305 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.032609 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET 文件：357.14 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | |
P11NM60FD产品属性
- 类型
描述
- 型号
P11NM60FD
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT404 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ST |
2022+ |
47 |
全新原装 货期两周 |
||||
ST/意法 |
25+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
ST/意法 |
08+ |
TO220F |
480 |
||||
ST/意法 |
23+ |
TO220F |
56688 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/意法 |
24+ |
TO220F |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
25+ |
SOT-23 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
P11NM60FD规格书下载地址
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DdatasheetPDF页码索引
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