位置：首页 > IC中文资料第5509页 > P10N
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P10N | 包装：散装 描述：NUT DRIVER HEX SOCKET 5/16\ 工具 螺丝和螺母起子 | ApexToolGroup Apex Tool Group |  |   |
HighSpeed 2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 |  | | |
10A, 600V N-CHANNEL MOSFET GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | | | |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT Generalfeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■LOWERCRES/CIESRATIO(NO CROSS-CONDUCTIONSUSCEPTIBILITY) ■VERYSOFTULTRAFASTRECOVERY ANTIPARALLELDIODE Description Usingthelatesthighvoltagetechnologybasedon apatentedstriplayout,STMicroelectronicshas designedana | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel 650 V (D-S) MOSFET 文件：1.033119 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel 650 V (D-S) MOSFET 文件：1.033099 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 650V (D-S) Power MOSFET 文件：1.10726 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Silicon 650V N-Channel MOS 文件：1.106 Mbytes Page：6 Pages | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 |  | | |
N-Channel 650V (D-S) Power MOSFET 文件：1.10595 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit |  | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | | |
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK PEAK electronic design limit | | |
P10N产品属性
- 类型
描述
- 型号
P10N
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3264 |
原厂直销,现货供应,账期支持! |
|||
MOTOROLA/摩托罗拉 |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
1926+ |
TO-220F |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
PEAK |
25+ |
全新-电源模块 |
10238 |
PEAK电源模块P10NG-4824Z2:1H30LF交期短价格好#即刻询购立享优惠#长期有排单订 |
|||
ST |
1103+ |
TO-220 |
245 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
WS |
1 |
||||||
ST/意法 |
23+ |
TO-220 |
25000 |
只做进口原装假一罚百 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
23+ |
TO-220F |
90000 |
一定原装房间现货 |
|||
TO-220F |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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P10N规格书下载地址
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P10N数据表相关新闻
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DdatasheetPDF页码索引
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