位置：首页 > IC中文资料第5509页 > P10N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P10N | 包装：散装 描述：NUT DRIVER HEX SOCKET 5/16\ 工具 螺丝和螺母起子 | ATG |   | |
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 | | ||
10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan | SILAN 士兰微 | | ||
10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan | SILAN 士兰微 | | ||
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. | STMICROELECTRONICS 意法半导体 | | ||
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design | STMICROELECTRONICS 意法半导体 | | ||
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033119 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033099 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10726 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
Silicon 650V N-Channel MOS 文件：1.106 Mbytes Page：6 Pages | NIUHANG 纽航电子 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10595 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH™ IGBT | STMICROELECTRONICS 意法半导体 | | ||
PMB-SERIES 文件：140.13 Kbytes Page：4 Pages | PEAK | | ||
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P10N产品属性
- 类型
描述
- 型号
P10N
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+ |
DIP |
2987 |
绝对全新原装现货供应! |
|||
ST/意法 |
25+ |
TO-220 |
25000 |
只做进口原装假一罚百 |
|||
TO-220F |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ST |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
25+23+ |
TO-220 |
24962 |
绝对原装正品全新进口深圳现货 |
|||
PEAK |
25+ |
全新-电源模块 |
10238 |
PEAK电源模块P10NG-4824Z2:1H30LF交期短价格好#即刻询购立享优惠#长期有排单订 |
|||
ST |
22+ |
TO-220 |
3000 |
原装正品,支持实单 |
|||
ST/意法 |
23+ |
TO-220 |
40 |
||||
ST/意法 |
23+ |
56688 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
PEAK |
2450+ |
DIP5 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
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P10N规格书下载地址
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DdatasheetPDF页码索引
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