HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

10A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan

N-Channel 650 V (D-S) MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel 6 50V (D-S) Power MOSFET

文件：2.17857 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages