DO-214AA Package Symbolization

DO-214AA Package Symbolization

MicroCapacitance (MC) SA SIDACtor Device

DO-214AA Package Symbolization

封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：THYRISTOR 25V 150A DO214AA 电路保护 TVS - 晶闸管

宽带优化保护

MicroCapacitance (MC) SA SIDACtor Device

MicroCapacitance (MC) SA SIDACtor짰 Device

MicroCapacitance (MC) SA SIDACtor짰 Device

MicroCapacitance (MC) SA SIDACtor® Device These DO-214AA SAMC SIDACtor devices are intended for applications sensitive to load values. Typically, high speed connections, such as Ethernet, xDSL, and T1/E1, require a lower capacitance. CO values for the MicroCapacitance device are 40 lower than a s

gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

MC Series DO-214 are low capacitance SIDACtor짰 devices designed to protect

Description MC Series DO-214 are low capacitance SIDACtor® devices designed to protect broadband equipment such as VOIP, DSL modems and DSLAMs from damaging overvoltage transients. The series provides a surface mount solution that enables equipment to comply with global regulatory standards whil

宽带优化保护

P0300SAMCLRP - 电路保护器, 25V, DO-214AA

封装/外壳：DO-214AA，SMB 包装：散装 描述：THYRISTOR 25V 150A DO214AA 电路保护 TVS - 晶闸管

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

Silicon planar type

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Silicon PIN Photodiodes

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