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FQB55N10中文资料
FQB55N10数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V, ID = 27.5 A
• Low Gate Charge (Typ. 75 nC)
• Low Crss (Typ. 130 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
FQB55N10产品属性
- 类型
描述
- 型号
FQB55N10
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
55A; Drain Source Voltage
- Vds
100V; On Resistance
- Rds(on)
26mohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
4V; Power Dissipation
- Pd
155W ;RoHS
- Compliant
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
D2PAK-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ONSEMI |
25+ |
TO-263 |
1543 |
原厂原装,价格优势 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ONSEMI/安森美 |
2511 |
TO-263-2 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
FAIRCHILD/仙童 |
24+ |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
on |
18+ |
na |
1600 |
全新原装公司现货
|
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
29600 |
一级分销商! |
|||
ON |
22+ |
TO-263 |
15000 |
原装优质现货订货渠道商 |
|||
FAIRCHILD/仙童 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
FQB55N10TM 价格
参考价格：￥5.2857
FQB55N10 资料下载更多...
FQB55N10相关电子新闻
FQB55N10TM
FQB55N10TM
2024-1-16
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ONSEMI相关芯片制造商
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