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FQB50N06中文资料
FQB50N06数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 50 A , 60 V, RDS(on) = 22 mΩ (Max.) @VGS = 10 V, ID = 25 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 65 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
FQB50N06产品属性
- 类型
描述
- 型号
FQB50N06
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK, Transistor
- Polarity
N Channel, Continuous Drain Current
- Id
50
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET, N, D2-PAK, Transistor
- Polarity
N Channel, Continuous Drain Current
- Id
50A, Drain Source Voltage
- Vds
60V, On Resistance
- Rds(on)
22mohm, Rds(on) Test Voltage
- Vgs
10V, Threshold Voltage
- Vgs
4V, Power Dissipation
- Pd
120W , RoHS
- Compliant
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
FAIRCHILD |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
|||
FAIRCHILD |
2023+环保现货 |
TO-263 |
20000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
FAIRCHILD |
25+ |
TO-252 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
FAIRCHILD/仙童 |
25+ |
TO-263 |
150 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
FAIRCHILD/仙童 |
24+ |
TO-263 |
30000 |
只做正品原装现货 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
26 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILDSEM |
2025+ |
TO-263-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
FAIRCHILD/仙童 |
23+ |
TO-2632L(D2PAK) |
50000 |
全新原装正品现货,支持订货 |
FQB50N06TM 价格
参考价格:¥2.9608
FQB50N06 资料下载更多...
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FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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