General Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Ultra Field Stop Trench construction, and provides

superior performance in demanding switching applications, offering

both low on-state voltage and minimal switching loss. The IGBT is

well suited for UPS and solar applications. Incorporated into the

device is a soft and fast co-packaged free wheeling diode with a low

forward voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• Maximum Junction Temperature: TJ = 175°C

• Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 75 A

• 100% of the Parts Tested for ILM(1)

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• RoHS Compliant

Applications

• Solar Inverter, UPS