Description

Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the

optimum performance with low switching and conduction losses for

high−efficiency operations in various applications like Solar, UPS and

ESS.

Features

• Maximum Junction Temperature − TJ = 175°C

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• Smooth and Optimized Switching

• Low Switching Loss

• RoHS Compliant

Applications

• Boost and Inverter in Solar System

• UPS

• Energy Storage System