Description

Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the

optimum performance with low switching and conduction losses for

high−efficiency operations in various applications like Solar, UPS and ESS.

Features

 Maximum Junction Temperature − TJ = 175C

 Positive Temperature Coefficient for Easy Parallel Operation

 High Current Capability

 Smooth and Optimized Switching

 Low Switching Loss

 RoHS Compliant

Applications

 Boost and Inverter in Solar System

 UPS

 Energy Storage System