Description

Using innovative field stop trench IGBT technology,

ON Semiconductor’s new series of field−stop trench IGBTs offer

optimum performance for solar inverter, UPS, welder, and digital

power generator where low conduction and switching losses are

essential.

Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A

• 100% of Parts Tested ILM (Note 2)

• High Input Impedance

• Tightened Parameter Distribution

• Short Circuit Ruggedness > 5 s @ 25°C

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Digital Power Generator

• Telecom, ESS