Features

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A

Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A

Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency

Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

Applications

VRM Vcore Switching for Desktop and Server

OringFET / Load Switching

DC-DC Conversion

Motor Bridge Switch