NPN Silicon Phototransistor

[Rhopoint Components Ltd] The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • He

NPN Silicon Phototransistor

[Rhopoint Components Ltd] The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • He

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRIAC SC73 分立半导体产品 晶闸管 - TRIAC

TRIAC SC73

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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