Vertical Cavity Surface Emitting Laser in ST Optical Sub-Assembly

Description: The OPV314AT is a high performance 850 nm VCSEL packaged for high speed communication links. OPV314AT combines all the performance advantages of a VCSEL with the addition of a power monitor diode for precise control of optical power. The OPV314YAT and OPV314AT are identical electrica

Vertical Cavity Surface Emitting Laser

•850nm VCSEL Technology\n• Data rates up to 2.5 Gbps\n• High thermal stability\n• Low drive current / high output density\n• Narrow and concentric beam angle\n• Recommended for multimode fiber applications\n• Burned in for communication level reliability;

封装/外壳：径向，罐，3 引线（5.4mm，TO-46） 包装：散装 描述：LASER DIODE 850NM 1.4MW TO46 光电器件 激光二极管，模块

Technical Data

文件：341.86 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser

文件：284.95 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser

文件：284.95 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser

文件：849.11 Kbytes Page：7 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：786.84 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser

文件：284.95 Kbytes Page：4 Pages

封装/外壳：面板安装，ST 连接器 描述：LASER DIODE 850NM PANEL MOUNT ST 光电器件 激光二极管，模块

激光二极管

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：226.01 Kbytes Page：5 Pages

激光二极管

Vertical Cavity Surface Emitting Laser

文件：284.95 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser

文件：284.95 Kbytes Page：4 Pages

Technical Data

文件：341.86 Kbytes Page：4 Pages

Vertical Cavity Surface Emitting Laser

文件：849.11 Kbytes Page：7 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：786.84 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：786.84 Kbytes Page：3 Pages

Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly

文件：226.01 Kbytes Page：5 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch