RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V

Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB • 100 tested for load mismatch at all phase angles with 30:1 VSWR • Gold metallizat

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF314 is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

Bipolar

Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. ·Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB\n·Gold Metallization System for High Reliability Applications\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR;

The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V

文件：228.74 Kbytes Page：5 Pages

封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 35V 211-07 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTORS NPN SILICON

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF314A is Designed for Class C Power Amplifier Applications up to 200 MHz. FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System

The RF Line NPN Silicon Power Transistor

文件：228.74 Kbytes Page：5 Pages

The RF Line NPN Silicon Power Transistor

文件：639.85 Kbytes Page：6 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig