OPTICALLY COUPLED ISOLATORS

Description The OPI2152 and OPI2252 each consist of a gallium arsenide infrared light emitting diode coupled to an NPN silicon phototransistor mounted in a six pin dual-in-line package. The OPI2152 and OPI2252 are identical except for input-to-output isolation voltage. Features • 1500 or 2500 v

DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER

Product Description The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

12-bit, 30MSOS ADC

DESCRIPTION The WM2152 is a high speed 12-bit analogue-to-digital converter operating on a 3.3V supply. This device includes a high bandwidth sample and hold and internal voltage references. Conversion is controlled by a single clock input. FEATURES • 12-bit resolution ADC • 30MSPS conversion

12-bit, 30MSOS ADC

DESCRIPTION The WM2152 is a high speed 12-bit analogue-to-digital converter operating on a 3.3V supply. This device includes a high bandwidth sample and hold and internal voltage references. Conversion is controlled by a single clock input. FEATURES • 12-bit resolution ADC • 30MSPS conversion

12-bit, 30MSOS ADC

DESCRIPTION The WM2152 is a high speed 12-bit analogue-to-digital converter operating on a 3.3V supply. This device includes a high bandwidth sample and hold and internal voltage references. Conversion is controlled by a single clock input. FEATURES • 12-bit resolution ADC • 30MSPS conversion

Reflective Photosensor

文件：53.36 Kbytes Page：2 Pages