Surface Mount Optically Coupled Isolator

Description: Each Optically coupled isolator in this data sheet contains an infrared Light Emitting Diode (LED) and a NPN silicon Photosensor. The OPI210 and OPI211 devices have 890 nm Light Emitting Diode (LED) and NPN phototransistor and coupled on an FR-4 substrate. The devices are made with a

Surface mount optically coupled isolator

•1kV electrical isolation\n• Miniature package ideal for surface mount applications\n• TTL, DTL compatible\n• High DC current transfer ratio;

封装/外壳：4-SMD，无引线 包装：散装 描述：OPTOISOLATR 1KV TRANSISTOR 4-SMD 隔离器 光隔离器 - 晶体管，光电输出

OPTICALLY COUPLED ISOLATORS

Description The OPI2100 consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard plastic six pin dual-in-line package. This device is designed to directly drive from 1 to 10 TTL loads and has very good output sinking characteristics at low si

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

POWER RECTIFIERS(2.0A,500-1000V)

Voltage Follower

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