Slotted Op tical Switch

Description The OPB817 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The extended deep slot allows for a longer reach of the optical center line from the mounting plane, .90” (22.86 mm). Internal ape

Slotted Optical Switch

Description: The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. The OPB817Z has an 0.

Slotted optical switch

•0.20” (5.08 mm) wide gap, 0.86” (21.84 mm) deep slot\n• 24” (609 mm) 26 AWG wires\n• Dust protection\n• Two mounting tabs;

封装/外壳：模块，预接线 包装：散装 描述：SENSOR OPT SLOT PHOTOTRANS MODUL 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

Slotted Optical Switch

Description: The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. The OPB817Z has an 0.

Slotted Switch, T Package

•0.20” (5.08 mm) wide gap, 0.86” (21.84 mm) deep slot\n• 24” (609 mm) 26 AWG wires\n• Dust protection\n• Two mounting tabs;

Slotted Optical Switch

Description: The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Features: • 0.20” (5.0

Slotted Optical Switch

Description: The OPB817Z slotted switch consists of an infrared emitting diode and a NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Features: ● 0.20” (5.0

封装/外壳：模块，预接线 包装：散装 描述：SENSOR OPT SLOT PHOTOTRANS MODUL 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

丝印代码：6D*；NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

NPN MEDIUM POWER TRANSISTOR

DECRIPTION The STX817 is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. ■ DEVICE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH