Description

The OPB817 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The extended deep slot allows for a longer reach of the optical center line from the mounting plane, .90” (22.86 mm).

Internal apertures are .010”x 0.06”for the phototransistor “S side”and .050”x .06”for the LED “E side”.

Features

• .20”(5.08 mm) wide gap

• 24”minimum, 26 AWG wire leads

• Dust protection

• .86”(21.8 mm) deep slot