Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflecƟve assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

Photologic® Reflective Object Sensor

Description: The OPB760N, OPB760T and OPB770T series of reflective assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. Features: • Choice of mountin

包装：盒 描述：SENSOR REFLCTV 5.58MM TOTEM POLE 传感器，变送器 光学传感器 - 光电，工业

Reflective Sensor, Focused

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th