Photologic짰 Slotted Optical Switch

Description: The OPB120 through OPB123 devices consist of an infrared emitting diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifier and a Schmitt Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a

Photologic Slotted Optical Switch

Description The OPB120 through OPB123 devices consist of an infrared emitng diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifer and a Schmit Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a 0.080

Photologic® Slotted Optical Switch

Features: • Choice of output configuration • Printed circuit board mounting • Opaque plastic housing • Low profile • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing Description: The OPB120B consists of an infrared emitting diode and a Photologic® sensor (which is a monolithic in

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPTICAL 2.03MM PCB MOUNT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board