PHOTOLOGIC SLOTTED OPTICAL SWITCHES

Description: The OPB120A through OPB123A devices consist of an infrared emitting diode and a Photologic® sensor. Features: • Choice of output configuration • Printed circuit board mounting • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing • Opaque plastic housing • Low profile

Photologic slotted optical switch

Silicon Photo Transistor

Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al(2um), Bottom - Au 1.4 Back Metal : Au(1,000Å ) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

Photologic Slotted Optical Switch

Description The OPB120 through OPB123 devices consist of an infrared emitng diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifer and a Schmit Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a 0.080

Photologic® Slotted Optical Switch

Features: • Choice of output configuration • Printed circuit board mounting • Opaque plastic housing • Low profile • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing Description: The OPB120B consists of an infrared emitting diode and a Photologic® sensor (which is a monolithic in

PHOTOLOGIC SLOTTED OPTICAL SWITCHES

Description: The OPB120A through OPB123A devices consist of an infrared emitting diode and a Photologic® sensor. Features: • Choice of output configuration • Printed circuit board mounting • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing • Opaque plastic housing • Low profile

Photologic짰 Slotted Optical Switch

Description: The OPB120 through OPB123 devices consist of an infrared emitting diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifier and a Schmitt Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a

Photologic짰 Slotted Optical Switch

Description: The OPB120 through OPB123 devices consist of an infrared emitting diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifier and a Schmitt Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a

Photologic® Slotted Optical Switch

Features: • Choice of output configuration • Printed circuit board mounting • Opaque plastic housing • Low profile • 0.080” (2.03 mm) wide slot • 0.275” (6.99 mm) lead spacing Description: The OPB120B consists of an infrared emitting diode and a Photologic® sensor (which is a monolithic in

Photologic Slotted Optical Switch

Description The OPB120 through OPB123 devices consist of an infrared emitng diode and a Photologic® sensor (which is a monolithic integrated circuit that incorporates a linear amplifer and a Schmit Trigger). The OPB120 series have an LED and Photologic® sensor mounted on opposite sides of a 0.080

Silicon Photo Transistor

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPTICAL 2.03MM PCB MOUNT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

Slotted Switch, L Package

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPTICAL 2.03MM PCB MOUNT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll