位置:首页 > IC中文资料第337页 > OPA835IDBVR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
OPA835IDBVR | OPAx835 Ultra-Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 1 Features • Ultra-Low Power – Supply Voltage: 2.5 V to 5.5 V – Quiescent Current: 250 μA/ch (Typical) – Power Down Mode: 0.5 μA (Typical) • Bandwidth: 56 MHz (AV = 1 V/V) • Slew Rate: 160 V/μs • Rise Time: 10 ns (2 VSTEP) • Settling Time (0.1%): 55 ns (2 VSTEP) • Overdrive Recovery T | TI 德州仪器 | ||
OPA835IDBVR | Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 文件:1.76721 Mbytes Page:49 Pages | TI 德州仪器 | ||
OPA835IDBVR | Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 文件:1.35435 Mbytes Page:43 Pages | TI 德州仪器 | ||
OPA835IDBVR | Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 文件:1.81143 Mbytes Page:51 Pages | TI 德州仪器 | ||
OPA835IDBVR | Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 文件:2.15156 Mbytes Page:57 Pages | TI 德州仪器 | ||
OPA835IDBVR | Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 文件:2.06661 Mbytes Page:53 Pages | NSC 国半 | ||
OPAx835 Ultra-Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp 1 Features • Ultra-Low Power – Supply Voltage: 2.5 V to 5.5 V – Quiescent Current: 250 μA/ch (Typical) – Power Down Mode: 0.5 μA (Typical) • Bandwidth: 56 MHz (AV = 1 V/V) • Slew Rate: 160 V/μs • Rise Time: 10 ns (2 VSTEP) • Settling Time (0.1%): 55 ns (2 VSTEP) • Overdrive Recovery T | TI 德州仪器 | |||
SWITCHMODE??Power Rectifirers DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d | MOTOROLA 摩托罗拉 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q | NEC 瑞萨 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q | NEC 瑞萨 | |||
LMC835 Digital Controlled Graphic Equalizer 文件:474.13 Kbytes Page:18 Pages | NSC 国半 | |||
LMC835 Digital Controlled Graphic Equalizer 文件:474.13 Kbytes Page:18 Pages | NSC 国半 |
OPA835IDBVR产品属性
- 类型
描述
- 型号
OPA835IDBVR
- 功能描述
高速运算放大器 Ultra Low Pwr RRO Neg Rail In VFB Amp
- RoHS
否
- 制造商
Texas Instruments
- 通道数量
1 电压增益
- dB
116 dB
- 输入补偿电压
0.5 mV
- 转换速度
55 V/us
- 工作电源电压
36 V
- 电源电流
7.5 mA
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
SOT23-6 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI/德州仪器 |
25+ |
SOT-23-6 |
32360 |
TI/德州仪器全新特价OPA835IDBVR即刻询购立享优惠#长期有货 |
|||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI/德州仪器 |
2450+ |
SOT23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI |
2026+ |
SOT23 |
12000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
TI/德州仪器 |
24+ |
SOT23-6 |
6360 |
只供应原装正品 欢迎询价 |
|||
TI/德州仪器 |
22+ |
SOT23-6 |
35000 |
原装优质现货订货渠道商 |
|||
TI/德州仪器 |
23+ |
SOT-236 |
9990 |
只有原装 |
|||
TI |
22+ |
SOT-23-6 |
20000 |
OPA835IDBVR芯片相关品牌
OPA835IDBVR规格书下载地址
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OPA835IDBVR数据表相关新闻
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製造商: Texas Instruments 產品類型: 高速運算放大器 RoHS: 詳細資料 系列: OPA855 通道數: 1 Channel GBP - 增益帶寬產品: 8 GHz SR - 迴轉率: 2.75 kV/us 電壓增益dB: 76 dB CMRR - 共模抑制比: 90 dB to 100 dB 每通道的輸出電流: 105 mA Ib - 輸入偏置電流: - 5 uA Vos - 輸入偏移電壓: 2.5 mV
2021-7-2
DdatasheetPDF页码索引
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