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型号 功能描述 生产厂家 企业 LOGO 操作
OPA835IDBVR

OPAx835 Ultra-Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

1 Features • Ultra-Low Power – Supply Voltage: 2.5 V to 5.5 V – Quiescent Current: 250 μA/ch (Typical) – Power Down Mode: 0.5 μA (Typical) • Bandwidth: 56 MHz (AV = 1 V/V) • Slew Rate: 160 V/μs • Rise Time: 10 ns (2 VSTEP) • Settling Time (0.1%): 55 ns (2 VSTEP) • Overdrive Recovery T

TI

德州仪器

OPA835IDBVR

Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

文件:1.76721 Mbytes Page:49 Pages

TI

德州仪器

OPA835IDBVR

Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

文件:1.35435 Mbytes Page:43 Pages

TI

德州仪器

OPA835IDBVR

Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

文件:1.81143 Mbytes Page:51 Pages

TI

德州仪器

OPA835IDBVR

Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

文件:2.15156 Mbytes Page:57 Pages

TI

德州仪器

OPA835IDBVR

Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

文件:2.06661 Mbytes Page:53 Pages

NSC

国半

OPAx835 Ultra-Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp

1 Features • Ultra-Low Power – Supply Voltage: 2.5 V to 5.5 V – Quiescent Current: 250 μA/ch (Typical) – Power Down Mode: 0.5 μA (Typical) • Bandwidth: 56 MHz (AV = 1 V/V) • Slew Rate: 160 V/μs • Rise Time: 10 ns (2 VSTEP) • Settling Time (0.1%): 55 ns (2 VSTEP) • Overdrive Recovery T

TI

德州仪器

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

MOTOROLA

摩托罗拉

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

OPA835IDBVR产品属性

  • 类型

    描述

  • 型号

    OPA835IDBVR

  • 功能描述

    高速运算放大器 Ultra Low Pwr RRO Neg Rail In VFB Amp

  • RoHS

  • 制造商

    Texas Instruments

  • 通道数量

    1 电压增益

  • dB

    116 dB

  • 输入补偿电压

    0.5 mV

  • 转换速度

    55 V/us

  • 工作电源电压

    36 V

  • 电源电流

    7.5 mA

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOT23-6
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
TI/德州仪器
25+
SOT-23-6
32360
TI/德州仪器全新特价OPA835IDBVR即刻询购立享优惠#长期有货
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
TI/德州仪器
2450+
SOT23
8850
只做原装正品假一赔十为客户做到零风险!!
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TI
2026+
SOT23
12000
只做原装,公司现货,提供一站式BOM配单服务!
TI/德州仪器
24+
SOT23-6
6360
只供应原装正品 欢迎询价
TI/德州仪器
22+
SOT23-6
35000
原装优质现货订货渠道商
TI/德州仪器
23+
SOT-236
9990
只有原装
TI
22+
SOT-23-6
20000

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    2021-7-2