OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Amp in Space?멐nhanced Plastic

文件：1.12625 Mbytes Page：23 Pages

采用增强型航天塑料的耐辐射四路 11MHz 低噪声精密 RRIO JFET 放大器

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Amp in Space?멐nhanced Plastic

文件：1.12625 Mbytes Page：23 Pages