10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

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OPAx316 10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Unity-Gain Bandwidth: 10 MHz • Low IQ: 400 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 11 nV/√Hz at 1 kHz • Low Input Bias Current: ±5 pA • Offset Voltage: ±0.5 mV • Unity-Gain Stable • Internal RFI-EMI Filter • Shutdown Version: OPA2316S • Extended Temperature R

丝印代码：SLE；OPAx316 10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

1 Features 1• Unity-Gain Bandwidth: 10 MHz • Low IQ: 400 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 11 nV/√Hz at 1 kHz • Low Input Bias Current: ±5 pA • Offset Voltage: ±0.5 mV • Unity-Gain Stable • Internal RFI-EMI Filter • Shutdown Version: OPA2316S • Extended Temperature R

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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