丝印代码：OPA172；OPAx172 36-V, Single-Supply, 10-MHz, Rail-to-Rail Output Operational Amplifiers

1 Features 1• Wide Supply Range: +4.5 V to +36 V, ±2.25 V to ±18 V • Low Offset Voltage: ±0.2 mV • Low Offset Drift: ±0.3 μV/°C • Gain Bandwidth: 10 MHz • Low Input Bias Current: ±8 pA • Low Quiescent Current: 1.6 mA per Amplifier • Low Noise: 7 nV/√Hz • EMI and RFI Filtered Inputs • Inp

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE