丝印代码：OSVI；OPAx170 36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line Series

1 Features • Supply Range: 2.7 V to 36 V, ±1.35 V to ±18 V • Low Noise: 19 nV/√Hz • RFI Filtered Inputs • Input Range Includes the Negative Supply • Input Range Operates to Positive Supply • Rail-to-Rail Output • Gain Bandwidth: 1.2 MHz • Low Quiescent Current: 110 μA per Amplifier • High

36V, Single-Supply, SOT553, Low-Power OPERATIONAL AMPLIFIERS

文件：1.68569 Mbytes Page：28 Pages

丝印代码：OSVI；36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line Series

文件：3.44695 Mbytes Page：56 Pages

36V, Single-Supply, SOT553, Low-Power OPERATIONAL AMPLIFIERS

文件：1.71866 Mbytes Page：30 Pages

丝印代码：OSVI；OPAx170 36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line Series

1 Features • Supply Range: 2.7 V to 36 V, ±1.35 V to ±18 V • Low Noise: 19 nV/√Hz • RFI Filtered Inputs • Input Range Includes the Negative Supply • Input Range Operates to Positive Supply • Rail-to-Rail Output • Gain Bandwidth: 1.2 MHz • Low Quiescent Current: 110 μA per Amplifier • High

丝印代码：OSVI；OPAx170 36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line Series

1 Features • Supply Range: 2.7 V to 36 V, ±1.35 V to ±18 V • Low Noise: 19 nV/√Hz • RFI Filtered Inputs • Input Range Includes the Negative Supply • Input Range Operates to Positive Supply • Rail-to-Rail Output • Gain Bandwidth: 1.2 MHz • Low Quiescent Current: 110 μA per Amplifier • High

丝印代码：OSVI；OPAx170 36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line Series

1 Features • Supply Range: 2.7 V to 36 V, ±1.35 V to ±18 V • Low Noise: 19 nV/√Hz • RFI Filtered Inputs • Input Range Includes the Negative Supply • Input Range Operates to Positive Supply • Rail-to-Rail Output • Gain Bandwidth: 1.2 MHz • Low Quiescent Current: 110 μA per Amplifier • High

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly