NPN SILICON PHOTOTRANSISTORS

Description Features

NPN Phototransistor

Features: • TO-18 hermetically sealed package • Mechanically and spectrally matched to OP130 and OP230 LEDs • TX and TXV process available (see Hi-Rel section) • Choice of narrow or wide receiving angle • Variety of sensitivity ranges • Enhanced temperature range Description: Each device i

NPN Phototransistor

Features: • TO-18 hermetically sealed package • Mechanically and spectrally matched to OP130 and OP230 LEDs • TX and TXV process available (see Hi-Rel section) • Choice of narrow or wide receiving angle • Variety of sensitivity ranges • Enhanced temperature range Description: Each device i

Phototransistor

•TO-18 hermetically sealed package\n• Mechanically and spectrally matched to OP130 and OP230 LEDs\n• TX and TXV process available\n• Choice of narrow or wide receiving angle\n• Variety of sensitivity ranges\n• Enhanced temperature range;

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：SENSOR PHOTO 890NM TOP TO206AA 传感器，变送器 光学传感器 - 光电晶体管

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead