NPN Pho to tran sistor with Base-Emit ter Resistor

Description The OP705 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitte

封装/外壳：T-1 包装：散装 描述：SENSOR PHOTO 935NM TOP VIEW T1 传感器，变送器 光学传感器 - 光电晶体管

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

GaAlAs Semiconductor Laser

文件：40.45 Kbytes Page：2 Pages

Silicon MOS IC

文件：30.64 Kbytes Page：2 Pages