GAAIAS PLASTIC INFRARED EMITTING DIODES

Description: Each device in this series is a high intensity gallium aluminum arsenide infrared emitting diode that is suited for use as a PCBoard mounted slotted switch or an easy mount PCBoard interrupter. Features: • Wide irradiance pattern • Side-looking package for space-limited applicatio

Plastic Infrared Emitting Diode

Description: Each device in this series is a high intensity gallium aluminum arsenide infrared emitting diode that is suited for use as a PCBoard mounted slotted switch or an easy mount PCBoard interrupter. Features: • Wide irradiance pattern • Side-looking package for space-limited applicatio

Plastic Infrared Emitting Diode

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封装/外壳：径向 包装：散装 描述：EMITTER IR 890NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

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VHF power MOS transistor

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