High Reliability Hermetic Infrared Emitting Diode

DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP

High Reliability Hermetic Infrared Emitting Diode

Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium al

封装/外壳：TO-46-2 透镜顶部金属罐 包装：散装 描述：EMITTER IR 890NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

High Reliability Hermetic Infrared Emitting Diode

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Hi- Reliability GaAlAs Infrared Emitting Diodes

文件：225.15 Kbytes Page：2 Pages

High Reliability Hermetic Infrared Emitting Diode

DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP

High Reliability Hermetic Infrared Emitting Diode

Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium al

封装/外壳：TO-46-2 透镜顶部金属罐 包装：散装 描述：EMITTER IR 890NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Hi- Reliability GaAlAs Infrared Emitting Diodes

文件：225.15 Kbytes Page：2 Pages

High Reliability Hermetic Infrared Emitting Diode

文件：119.28 Kbytes Page：3 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)