High Reliability Hermetic Infrared Emitting Diode

DescripƟon: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP

High Reliability Hermetic Infrared Emitting Diode

Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium al

封装/外壳：TO-46-2 透镜顶部金属罐 包装：散装 描述：EMITTER IR 890NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Hi- Reliability GaAlAs Infrared Emitting Diodes

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High Reliability Hermetic Infrared Emitting Diode

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COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)