GAAIAS HERMETIC INFRARED EMITTING DIODES

Description: Each OP223 (TX, TXV) and OP224 (S, TX, TXV) device is an 890 nm high reliability gallium aluminum arsenide infrared emitting diode that is mounted in a miniature hermetically sealed “pill” type package which can be directly mounted to PCBoards. The gallium aluminum arsenide feature p

Hi-Reliability GaAIAs Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

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Hermetic Infrared Emitting Diode

文件：396.4 Kbytes Page：4 Pages

TORQUE PRODUCTS

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Hermetic Infrared Emitting Diode

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封装/外壳：微型粒状 包装：散装 描述：EMITTER IR 890NM 100MA MINI-PILL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

Infrared LED

•Processed to OPTEK's military screening program, patterned after MIL-PRF-19500\n• Miniature hermetically sealed \"pill\" package\n• Twice the power output of GaAs at same drive current\n• \"S\" level screening available\n• Mechanically and spectrally matched to OP600 phototransistors;

Infrared LED

•Processed to OPTEK's military screening program, patterned after MIL-PRF-19500\n• Miniature hermetically sealed \"pill\" package\n• Twice the power output of GaAs at same drive current\n• \"S\" level screening available\n• Mechanically and spectrally matched to OP600 phototransistors;

Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

High Speed, High Power, Hermetic Infrared Emitting Diode

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封装/外壳：丸状，圆形 包装：散装 描述：EMITTER IR 875NM 100MA PILL 光电器件 LED 发射器 - 红外，紫外，可见光

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes Page：3 Pages

RF Transistor

RF Transistor NPN Silicon

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series