Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

封装/外壳：微型粒状 包装：散装 描述：EMITTER IR 890NM 100MA MINI-PILL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：447.57 Kbytes Page：3 Pages

Hi-Reliability GaAIAs Infrared Emitting Diode

文件：265.72 Kbytes Page：3 Pages

RF Transistor

RF Transistor NPN Silicon

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series