Hi-Reliability GaAIAs Infrared Emitting Diode

Description: Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emiƫng diode (GaAs), mounted in a miniature hermeƟcally sealed “pill” package with an enhanced temperature range and a high power output. These devices are designed for direct mounƟng to PCBo

Hi-Reliability GaAIAs Infrared Emitting Diode

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Hi-Reliability GaAIAs Infrared Emitting Diode

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封装/外壳：微型粒状 包装：散装 描述：EMITTER IR 890NM 100MA MINI-PILL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared LED

SCHOTTKY RECTIFIER

125℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Axial Lead and Cartridge Fuses - Subminiature Glass Body

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Mini 7/8 Male Internal Threads 5 Pin Field Attachable

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SMK FEMALE TO SMK FEMALE STRAIGHT ADAPTER

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Guard ring for enhanced ruggedness and long term reliability

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