Ultralow Power, Rail-to-Rail Output Operational Amplifiers

GENERAL DESCRIPTION The OP181, OP281 and OP481 are single, dual and quad ultralow power, single-supply amplifiers featuring rail-to-rail outputs. All operate from supplies as low as 2.0 V and are specified at +3 V and +5 V single supply as well as ±5 V dual supplies. FEATURES Low Supply

Ultralow Power, Rail-to-Rail Output Operational Amplifiers

The OP181, OP281 and OP481 are single, dual and quad ultralow power, single-supply amplifiers featuring rail-to-rail outputs. All operate from supplies as low as 2.0 V and are specified at +3 V and +5 V single supply as well as ±5 V dual supplies.Fabricated on Analog Devices' CBCMOS process, the OP1

SMD emitter component

•940nm wavelength\n• Up to 256kbps operation\n• Compliant with smart power meter standard ANSI C12.18\n• Lensed for maximum performance\n• Reverse gull wing design\n• Compatible with OPL6000 receiver component;

SMD Emitter Component

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封装/外壳：2-SMD，Z形弯曲，底部进入 包装：散装 描述：EMITTER IR 940NM 50MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

Ultralow Power, Rail-to-Rail Output Operational Amplifiers

GENERAL DESCRIPTION The OP181, OP281 and OP481 are single, dual and quad ultralow power, single-supply amplifiers featuring rail-to-rail outputs. All operate from supplies as low as 2.0 V and are specified at +3 V and +5 V single supply as well as ±5 V dual supplies. FEATURES Low Supply

Ultralow Power, Rail-to-Rail Output Operational Amplifiers

GENERAL DESCRIPTION The OP181, OP281 and OP481 are single, dual and quad ultralow power, single-supply amplifiers featuring rail-to-rail outputs. All operate from supplies as low as 2.0 V and are specified at +3 V and +5 V single supply as well as ±5 V dual supplies. FEATURES Low Supply

Ultralow Power, Rail-to-Rail Output Operational Amplifiers

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VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,