Micro Power Omnipolar Hall-effect Switch

OCS霍尔效应锁存器和开关产品是系列模拟或数模混合类传感器集成电路，用于检测外界磁场大小，输出高/低电平的电压信号;通过芯片内部设定的磁场响应阈值，进而可以精确检测目标物体的位置；常用来实现近位置检测、转速检测、行程检测、方向检测等功能，广泛应用于汽车、家电、工业及消费类领域。

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

Silicon epitaxial planar type

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