1 General description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications

requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2110 MHz to

2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside

of these frequencies.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Advanced high performance in-package Doherty

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating conditions

• Plastic package

3 Typical performance

VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF.[1]

Table 1. 2100 MHz — Typical Doherty single-carrier W-CDMA reference circuit performance